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This is the free Material Data Center Datasheet of Ultrafuse Z PCTG - Copolyester-Z - BASF

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Processing/Physical Characteristics단위시험규격
ISO 데이터
용융 부피 - 흐름 속도, MVR 67.5 cm³/10min ISO 1133
온도 275 °C -
하중 5 kg -
열적 특성단위시험규격
ISO 데이터
유리 전이 온도, 10 °C/min 81 °C ISO 11357-1/-2
하중하에서의 변형온도, 1.80 MPa 69 °C ISO 75-1/-2
하중하에서의 변형온도, 0.45 MPa 73 °C ISO 75-1/-2
기타 특성단위시험규격
밀도 1200 kg/m³ ISO 1183
3D Data단위시험규격
Other Standards[S]
인장탄성률, flat 1760 MPa ISO 527
인장탄성률, upright 1670 MPa ISO 527
인장 강도, flat 37.1 MPa ISO 527
인장 강도, upright 13.6 MPa ISO 527
파단시 신율 , flat 3.1 % ISO 527
파단시 신율 , upright 0.8 % ISO 527
굴곡 계수, flat 1610 MPa ISO 178
굴곡 계수, on-edge 1780 MPa ISO 178
굴곡 계수, upright 1490 MPa ISO 178
굴곡 강도, flat 55.5 MPa ISO 178
굴곡 강도, on-edge 70.8 MPa ISO 178
굴곡 강도, upright 20.2 MPa ISO 178
챠피 충격 강도, +23°C, on-edge 9.5 kJ/m² ISO 179/1eU
챠피 노치드 충격 강도, +23°C, flat 2.1 kJ/m² ISO 179/1eA
챠피 노치드 충격 강도, +23°C, on-edge 2.6 kJ/m² ISO 179/1eA
챠피 노치드 충격 강도, +23°C, upright 0.9 kJ/m² ISO 179/1eA
Izod충격강도, +23°C, flat 14.3 kJ/m² ISO 180/1U
Izod충격강도, +23°C, on-edge 24.2 kJ/m² ISO 180/1U
Izod충격강도, +23°C, upright 3.4 kJ/m² ISO 180/1U
아이조드 충격은 노치, +23°C, on-edge 3.4 kJ/m² ISO 180/1A
부피 저항, flat 40000 Ohm*m IEC 62631-3-1
부피 저항, on-edge 130 Ohm*m IEC 62631-3-1
S: These properties are reported by the producer according standards that are different to our defaults.
특징
생산 공정
Additive Manufacturing
인도 유형
Monofilament, 검정
특성
Amorphous
응용
전기 및 전자
지역별 검색
쨘횕쩐횈쨍횧쨍짰횆짬, 짱쨌쨈, 쨀짼쨘횓 쨔횞 횁횩쩐횙 쩐횈쨍횧쨍짰횆짬
Disclaimer
Copyright Altair Engineering GmbH. Altair Engineering GmbH assumes no liability for the system to be free of errors. The user takes sole responsibility for the use of this data under the exclusion of every liability from Altair Engineering GmbH; this is especially valid for claims of compensation resulting from consequential damages. Altair explicitly points out that any decision about the application of materials must be double checked with the producer of this material. This includes all contents of this system. Copyright laws are applicable for the content of this system.
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